http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2007091364-A1
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-773 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-962 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7613 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N99-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66439 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82B3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-05 |
filingDate | 2006-11-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2009-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-WO2007091364-A1 |
titleOfInvention | Method for manufacturing single-electron semiconductor element |
abstract | The SET manufacturing method of the present invention includes ferritin containing metal or semiconductor particles and a nonionic surfactant on a substrate having a source electrode and a drain electrode formed by laminating a titanium film and a metal film other than titanium. By dropping the solution, the ferritin is selectively arranged in the nanogap between the source electrode and the drain electrode. In the SET manufacturing method of the present invention, after ferritin is decomposed, metal or semiconductor particles can be fixed at appropriate positions as quantum dots in the nanogap between the source electrode and the drain electrode, and unnecessary quantum dots can be formed. Can be suppressed. |
priorityDate | 2006-02-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.