http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2007029465-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-044 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 |
| filingDate | 2006-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2009-03-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2007029465-A1 |
| titleOfInvention | Abrasive, method for polishing surface to be polished, and method for manufacturing semiconductor integrated circuit device |
| abstract | In the manufacture of semiconductor integrated circuit devices, SiC can be polished at high speed, or while polishing SiC at high speed, polishing of silicon dioxide in the insulating layer can be suppressed, and thus a highly planarized multilayer structure An abrasive capable of obtaining a semiconductor integrated circuit device having the above is provided. The abrasive comprises abrasive grains (A), one or more polishing rate modifiers (B) selected from the group consisting of benzotriazoles, 1H-tetrazoles, benzenesulfonic acids, phosphoric acid and organic phosphonic acids. And an organic solvent (C) having a relative dielectric constant of 15 to 80, a boiling point of 60 to 250 ° C., and a viscosity at 25 ° C. of 0.5 to 60 mPa · s, and water (D). |
| priorityDate | 2005-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 71.