http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2006107020-A1

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filingDate 2006-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2008-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-WO2006107020-A1
titleOfInvention High purity anhydrous aluminum chloride and method for producing the same
abstract All the major impurity components (impurity metals) derived from aluminum raw materials used in industrial anhydrous aluminum chloride production are reduced as much as possible, and the content of major impurity components excluding gallium (Ga) is 1 ppm or less. In addition, there is provided a high purity anhydrous aluminum chloride having a purity of 99.99 wt% or more, preferably 99.999 wt% or more obtained by subtracting the total of impurity components, and a method for producing the same. Anhydrous aluminum chloride in which the major impurity components (impurity metals) derived from aluminum raw materials used in the production of industrial anhydrous aluminum chloride are reduced as much as possible, and contains major impurity components excluding gallium (Ga) High-purity anhydrous aluminum chloride having an amount of 1 ppm or less and the purity of anhydrous aluminum chloride obtained by subtracting the total of impurity components being 99.99 wt% or more, preferably 99.999 wt% or more, and a method for producing the same It is.
priorityDate 2005-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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