http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2006093089-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-546 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-04 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03682 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01B33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-182 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B11-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04 |
| filingDate | 2006-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2008-08-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2006093089-A1 |
| titleOfInvention | Method for manufacturing polycrystalline silicon substrate, method for manufacturing photoelectric conversion element, and method for manufacturing photoelectric conversion module |
| abstract | Regarding the impurity concentration in the polycrystalline silicon substrate, when the boron concentration analyzed by SIMS is [B] and the substitution position carbon concentration analyzed by FTIR is [Cs], the region excluding the 1 cm wide region at the substrate edge, [B] ≧ 1E16 [atoms / cm 3 ] and [Cs] ≦ 2E17 [atoms / cm 3 ] Meet the polycrystalline silicon substrate. The Voc improvement width becomes larger than the conventional one, and Jsc is greatly improved. Thereby, a highly efficient polycrystalline silicon solar cell can be obtained. |
| priorityDate | 2005-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.