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filingDate 2005-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2008-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-WO2006051727-A1
titleOfInvention Method for forming holes in crystal substrate, and crystal substrate having holes formed by the method
abstract A crystal substrate 1 having straight or spiral deep holes 3 is provided at low cost. The main component is silicon, and when forming a straight hole, the single crystal substrate 1 processed so that the (100) plane is orthogonal to the depth direction of the hole to be formed and the hydrogen fluoride concentration is 10% or less. When forming a spiral hole, an etching solution having a hydrogen fluoride concentration of 28% or more is prepared, and metal particles 2 such as silver, platinum, and palladium are applied to the substrate surface by means of electroless plating or the like. It is characterized in that chemical etching is performed in the attached state.
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