http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2005022261-A1
Outgoing Links
Predicate | Object |
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classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-952 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D179-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G73-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G59-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
filingDate | 2004-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2007-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-WO2005022261-A1 |
titleOfInvention | Anti-reflective film forming composition containing polyamic acid |
abstract | PROBLEM TO BE SOLVED: To provide an antireflective film forming composition for forming an antireflective film that is used in a lithography process for manufacturing a semiconductor device and can be developed with an alkaline developer for photoresist, and a photo using the antireflective film forming composition A method for forming a resist pattern is provided. An antireflection film-forming composition comprising a polyamic acid produced from a tetracarboxylic dianhydride compound and a diamine compound having at least one carboxyl group, a compound having at least two epoxy groups, and a solvent. |
priorityDate | 2003-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 530.