http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2004105140-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-615 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-938 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-221 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78642 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S977-742 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-491 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0665 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate | 2003-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2006-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2004105140-A1 |
| titleOfInvention | Field effect transistor and manufacturing method thereof |
| abstract | The present invention has a structure in which a gate-channel distance is shortened and miniaturized without going through a microfabrication process, a gate capacity is large, and a high-performance vertical type capable of performing channel current control by a gate at a low voltage. It is an object of the present invention to provide a field effect transistor and a method by which the field effect transistor can be easily and efficiently manufactured without a complicated process such as a microfabrication process. The field effect transistor of the present invention includes a first electrode, a second electrode disposed in a state of being electrically insulated from the first electrode, the first electrode, and the second electrode. A semiconductive rod-shaped body provided along the inner wall of the hole that penetrates at least one and exposes the first electrode and the second electrode, and connects the first electrode and the second electrode; And a third electrode disposed in a state where at least a part thereof is inserted into the hole and is opposed to the semiconductive rod-like body through an insulating layer. An embodiment in which the thickness of the insulating layer is 50 nm or less, an embodiment in which the semiconductive rod-like body is a single-walled carbon nanotube, and the like are preferable. |
| priorityDate | 2003-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.