| abstract |
The present invention provides a switching element having stable bistable characteristics, high transition voltage, and excellent repetitive performance. A switching element having two kinds of stable resistance values with respect to a voltage applied between electrodes, and is formed as a thin film on a substrate in the order of a first electrode layer, an organic bistable material layer, and a second electrode layer. The organic bistable material constituting the organic bistable material layer is a quinomethane compound or a monoquinomethane compound. Further, the metal constituting the second electrode layer is diffused in the organic bistable material layer. The second electrode layer is formed by vapor deposition, and the temperature of the substrate during vapor deposition is preferably 30 to 150 ° C. |