| abstract |
In a method of manufacturing a capacitor using a conductor having a dielectric layer formed on the surface as one electrode and a semiconductor layer as the other electrode, an electrical minute defect portion is formed in the dielectric layer, The present invention relates to a method of manufacturing a capacitor in which a semiconductor layer is formed on a dielectric layer. The capacitor obtained by the production method of the present invention has a good capacity appearance rate, low ESR, and excellent reliability. |