http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2004022513-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-143 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-167 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07C43-225 |
| filingDate | 2003-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2004022513-A1 |
| titleOfInvention | Resist and resist pattern forming method |
| abstract | The resist according to the present invention contains either one of tetrachloromethyltetramethoxycalix [4] arene and trichloromethyltetramethoxycalix [4] arene. Resists containing these components are solvents with good working environment, such as ethyl lactate (EL), propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), ethyl propionate, n-butyl acetate, 2-heptanone, etc. In addition to these solvents, development is possible with tetramethylammonium hydroxide. By exposing the resist with an electron beam, an ultra-high resolution of 8 nm can be obtained, and various materials can be finely processed using the resist as a mask. According to such a resist, there is provided a photosensitive resist material that has a high resolution, is soluble in a solvent having a good working environment, and can be developed with a solvent having a good working environment, and an exposure method and a fine processing method using the same. |
| priorityDate | 2002-09-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.