http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2004016825-A1

Outgoing Links

Predicate Object
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28167
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
filingDate 2003-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2005-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-WO2004016825-A1
titleOfInvention Hafnium silicide target and method for manufacturing the same
abstract The present invention relates to a hafnium silicide target for forming a gate oxide film, which is made of HfSi 0.82 to 0.98 and has an oxygen content of 500 to 10,000 ppm . A powder having a composition consisting of HfSi 0.82-0.98 was synthesized and pulverized to 100 mesh or less at 1700 ° C. to 2120 ° C. and 150 to 2000 kgf / cm 2 , hot press or hot isostatic press ( HIP) to manufacture a hafnium silicide target for forming a gate oxide film. Suitable for the formation of HfSiO film and HfSiON film that can be used as high dielectric gate insulating film with characteristics replacing SiO 2 film and SiON film, has excellent resistance to embrittlement, and generates less particles In addition, a hafnium silicide target having no danger of ignition or explosion in the target manufacturing process and a method for manufacturing the same are obtained.
priorityDate 2002-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23986
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419577474
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419578708
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID451585522
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID22052933
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID977
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559021
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419523291
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23995

Total number of triples: 25.