http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2004016825-A1
Outgoing Links
Predicate | Object |
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classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28167 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
filingDate | 2003-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2005-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-WO2004016825-A1 |
titleOfInvention | Hafnium silicide target and method for manufacturing the same |
abstract | The present invention relates to a hafnium silicide target for forming a gate oxide film, which is made of HfSi 0.82 to 0.98 and has an oxygen content of 500 to 10,000 ppm . A powder having a composition consisting of HfSi 0.82-0.98 was synthesized and pulverized to 100 mesh or less at 1700 ° C. to 2120 ° C. and 150 to 2000 kgf / cm 2 , hot press or hot isostatic press ( HIP) to manufacture a hafnium silicide target for forming a gate oxide film. Suitable for the formation of HfSiO film and HfSiON film that can be used as high dielectric gate insulating film with characteristics replacing SiO 2 film and SiON film, has excellent resistance to embrittlement, and generates less particles In addition, a hafnium silicide target having no danger of ignition or explosion in the target manufacturing process and a method for manufacturing the same are obtained. |
priorityDate | 2002-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.