http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2003098699-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-49 |
| filingDate | 2003-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-09-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2003098699-A1 |
| titleOfInvention | Semiconductor device and display device using the same |
| abstract | In the inverted stagger type MOSFET (1), a gate insulating layer (4) made of zinc oxide and corresponding to the channel layer (5) which is the semiconductor layer is formed of amorphous aluminum oxide. By adopting such a structure, the defect level at the interface between the channel layer (5) and the gate insulating layer (4) is reduced, and it is equivalent to a semiconductor device in which all laminated films are made of crystalline laminated films. A level of performance can be obtained. Such a method can be applied to a forward stagger type MOSFET or the like, and has high versatility. |
| priorityDate | 2002-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.