http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2003091476-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1089 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1844 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76874 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2003-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2005-09-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2003091476-A1 |
| titleOfInvention | Semiconductor wafer having electroless plating method and metal plating layer formed thereon |
| abstract | An object is to provide a semiconductor wafer in which a thin, uniform and smooth electroless plating layer suitable as a seed layer is formed with good adhesion, and to provide an electroless plating method suitable for manufacturing the semiconductor wafer. And A semiconductor wafer is coated with a silane coupling agent having a functional group having a metal-trapping ability, and further coated with an organic solvent solution of a palladium compound such as palladium chloride, and then electroless plated. By such an electroless plating method, a semiconductor wafer having a film thickness of 70 to 5000 and an average surface roughness Ra of 10 to 100 and obtained. |
| priorityDate | 2002-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.