| abstract |
The present invention provides a crystalline metal oxide thin film by forming a metal oxide film composed mainly of amorphous material and then exposing it to a low-temperature plasma in a high-frequency electric field at a temperature of 180 ° C. or lower as post treatment. And a crystalline metal oxide thin film produced by the method. According to this manufacturing method, a dense and homogeneous crystalline metal oxide thin film can be formed on a base material at a low temperature without an aggressive heat treatment, so that the base material has relatively low heat resistance. In contrast, a metal oxide thin film having desirable characteristics can be formed without impairing the characteristics of the substrate. |