| abstract |
In order to favorably form a seed film and a metal thin film for wiring forming a dual damascene structure in a semiconductor device, annealing is performed after forming a seed film by physical vapor deposition (PVD), and then electrochemical plating (ECP) is performed. Thereby, a metal thin film for wiring is formed. To this end, a PVD system with a rapid thermal annealing chamber and an ECP system with a rapid thermal annealing chamber have been disclosed. |