http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2002048217-A1
Outgoing Links
Predicate | Object |
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classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S430-109 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0395 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F220-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07D307-77 |
filingDate | 2001-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2004-04-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-WO2002048217-A1 |
titleOfInvention | Polymer for photoresist and resin composition for photoresist |
abstract | The polymer compound for photoresist of the present invention has the following formula (I) (Wherein, R 1 , R 2 , R 3 , R 4 and R 5 are the same or different and represent a hydrogen atom or a methyl group. M, p and q each represent an integer of 0 to 2, and n is Represents 0 or 1. Note that the hydroxyl group and the carbonyloxy group extending from the main chain in the formula are each bonded to one of the two carbon atoms at the left end of the ring. At least one monomer unit represented by the formula: According to the polymer compound for a photoresist, when used as a base for a photoresist, adhesion to a substrate and etching resistance are expressed in a well-balanced manner. |
priorityDate | 2000-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 202.