| abstract |
The semiconductor device (10) having the light receiving function includes, for example, a semiconductor element (1) made of p-type silicon single crystal, first and second flat surfaces (2, 7), an n-type diffusion layer (3), The pn junction (4), the recrystallized layer (8), the antireflection film (6a), the negative electrode (9a), the positive electrode (9b), and the like are included. A cylindrical semiconductor element may be applied instead of the semiconductor element (1). |