http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S649894-A

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N60-857
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L39-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B13-00
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filingDate 1987-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02305df7455bc45e32e9e10dcf65e6f3
publicationDate 1989-01-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S649894-A
titleOfInvention Method for growing single crystal of superconducting oxide
abstract PURPOSE:To grow a single crystal of rare earth barium cuprate suitable as a high-temperature superconducting material, by growing the single crystal from a melt of a mixture, consisting essentially of rare earth barium cuprate, barium borate and cupric oxide and having a specific molar composition. CONSTITUTION:A melt of a mixture, consisting of a rare earth barium cuprate (RBa2Cu3O7-delta), barium borate (BaB2O3) and cupric oxide (CuO) and having a molar composition expressed by the formula is prepared. Furthermore, the above-mentioned R is one or more of Y and lanthanoids. For example, a mixture having a composition of Y1/3Ba2/3:CuO(7-delta)/3:BaB2O3:CuO at 80:10:10 expressed by mol.% is cited as the mixture expressed by the formula. A single crystal is grown from the aforementioned mixture by, e.g. filling the above-mentioned mixture in a growth vessel, melting the mixture while heating, then annealing the aforementioned melt at 1-10 deg.C/hr rate and growing the aimed single crystal of the rare earth barium cuprate suitable as a high-temperature superconducting material on the surfaces of wall and bottom of the vessel or the melt.
priorityDate 1987-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 23.