http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6487790-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_669c01133740c5233f2c8738904ea3af
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00
filingDate 1987-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_16a2d719653410984711fd8dba1e28c4
publicationDate 1989-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S6487790-A
titleOfInvention Dry etching method
abstract PURPOSE:To form a minute pattern with high precision and at a high rate by dissociating ions and radicals to form a plasma state, and loading an RF bias on a high-m.p. metal to be etched. CONSTITUTION:A microwave 1 and a magnetic field from a magnetic field generator 9 are exerted on a gas to fulfill the electron cyclotron resonance conditions to form a plasma state. An RF bias is impressed on an etching substrate 5 placed in the plasma thus excited by an RF bias source 7 through a working base 6, and loaded on the thin film of the high-m.p. metal. Accordingly, the gaseous CBrF3 introduced into an etching chamber 8 is dissociated into a CFx<+> ion and a Br radical. A negative floating potential is generated at this time on the surface of the etching substrate 5, and the dissociated CFx<+> ion is vertically injected into the thin film. As a result, the direction of the ion is controlled, and hence anisotropic etching is made possible. Consequently, the etching precision can be improved.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6296780-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-9930360-A1
priorityDate 1987-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6384
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419547108

Total number of triples: 14.