| abstract |
PURPOSE:To obtain an upper layer material for a two layered structure having high sensitivity, resolution, and resistance to oxygen plasma by constituting the upper layer material of a specified three-dimensional chiral siloxane. CONSTITUTION:The title pattern forming material consists of a tree-dimensional chiral silocane expressed by formula I. In formula I, R is a 1-4C alkyl group, 2-3C alkenyl group, cyclohexyl group, or a phenyl group; n is 4, 6, 8, 10 or 12. Polysilsesquioxane is utilized for a material for electron beam negative resist having two layered structure permitting formation of a pattern having always submicron dimension on a substrate having large difference of level. By this method, an upper layer material for a two layered structure resist having high sensitivity, resolution, and resistance to oxygen plasma is obtd. |