http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6468015-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e660bf548da827fc7b4cbb1c311092d4
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H03K5-13
filingDate 1987-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_216b76ce2b58c1e8c26bfeb4d9a398de
publicationDate 1989-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S6468015-A
titleOfInvention Delay circuit
abstract PURPOSE:To constitute a circuit of equivalently smaller number of stages of inverters by effectively using the gate polysilicon parasitic resistance of an internal cell to increase the extent of delay per one stage of inverters. CONSTITUTION:The drain of a P-channel transistor TR 15 and that of an N- channel TR 16 are connected through parasitic resistances 31-34 of respective gates of a P-channel TR 26 and an N-channel TR 26 in the succeeding stage. Consequently, polysilicon gate parasitic resistances 31-34 of the inverter in the succeeding stage are added extra to the output impedance of the inverter to increase the propagation delay time per one stage of inverters. Thus, a certain extent of delay is obtained by a smaller number of stages of inverters.
priorityDate 1987-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419499693
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID3033151

Total number of triples: 15.