http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6388438-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f97f0fa258a008bf056ad04b7f380dda |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-414 |
| filingDate | 1986-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bdda33fd30a0f803085f085c65b8e57f |
| publicationDate | 1988-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S6388438-A |
| titleOfInvention | Mosfet chemical electrode |
| abstract | PURPOSE: To enable stable operation as electrode, by covering the electrode with a resin film except for a exposed surface thereof through which gate metal senses chemical species. n CONSTITUTION: A P-type silicon wafer undergoes a patterning so that a channel are 4 set by a drain region 2 and a source region 3 is formed at a part on a substrate. Then, the entire surface of the silicon wafer is subjected to thermal oxidation except for a drain terminal setting section 21 and a source terminal setting section 31 thereof to form an oxide film. Moreover, a silicon nitride film is laminated on the film to obtain a MOSFET element 1. A gold or platinum film 7 is formed tight on a gate insulation film of the element 1 through a metal layer 6 made of chromium or titanium to form a gate material. Then, the work is covered with an insulating and water-resistant resin film at least except for a gate metal exposed at a part of a portion thereof corresponding to the area 4 so that chemical species in a solution to be measured only contact with the exposed part of gate metal, and none of other parts. This minimizes the amount of chemical species which permeates the film 7 to reach the metal layer 6. n COPYRIGHT: (C)1988,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009156827-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005022134-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9506892-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8766326-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8502277-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8772099-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63210655-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2406175-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/GB-2406175-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006224014-A |
| priorityDate | 1986-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.