http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S634656-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0d569d72bf141740d7a48936636f77b1
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K1-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-50
filingDate 1986-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_377a961d93dab585ce9245d79aad117f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2db8b028d5f053fd992ce5549a89d52a
publicationDate 1988-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S634656-A
titleOfInvention Soldering pretreatment of connecting terminal of vessel for semiconductor device
abstract PURPOSE: To form a pin (a lead) having mechanical properties such as sufficient flexural strength by employing a Cu member using Si as a matrix component as a terminal for connection, brazing the member and etching the member by a fluoride aqueous solution. n CONSTITUTION: SiO formed through a brazing process is brazed, the etching of metals such as other Cu-Ag, etc., is inhibited minimally, and a fluoride aqueous solution at 10W30°C such as a 50W200g/l ammonia fluoride liquid is selected in order to remove only SiO 2 . The whole is dipped in the fluoride aqueous solution for ten or two hundred sec, rinsed and dried. An SiO 2 layer shaped on brazing is removed completely through such a process and the surface can be purified, and the solder wettability of terminals for connection, such as pins, leads, etc. can be maintained excellently. Metals are hardly melted on the etching. n COPYRIGHT: (C)1988,JPO&Japio
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5149802-A
priorityDate 1986-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 18.