http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S634656-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0d569d72bf141740d7a48936636f77b1 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K1-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-50 |
filingDate | 1986-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_377a961d93dab585ce9245d79aad117f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2db8b028d5f053fd992ce5549a89d52a |
publicationDate | 1988-01-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | JP-S634656-A |
titleOfInvention | Soldering pretreatment of connecting terminal of vessel for semiconductor device |
abstract | PURPOSE: To form a pin (a lead) having mechanical properties such as sufficient flexural strength by employing a Cu member using Si as a matrix component as a terminal for connection, brazing the member and etching the member by a fluoride aqueous solution. n CONSTITUTION: SiO formed through a brazing process is brazed, the etching of metals such as other Cu-Ag, etc., is inhibited minimally, and a fluoride aqueous solution at 10W30°C such as a 50W200g/l ammonia fluoride liquid is selected in order to remove only SiO 2 . The whole is dipped in the fluoride aqueous solution for ten or two hundred sec, rinsed and dried. An SiO 2 layer shaped on brazing is removed completely through such a process and the surface can be purified, and the solder wettability of terminals for connection, such as pins, leads, etc. can be maintained excellently. Metals are hardly melted on the etching. n COPYRIGHT: (C)1988,JPO&Japio |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5149802-A |
priorityDate | 1986-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.