http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63302566-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4edd4e526605dbd18b513b4b30d19ab2 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 1987-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_114c32f21017a4df51e2273a8b2ca0e6 |
| publicationDate | 1988-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S63302566-A |
| titleOfInvention | Manufacture of mos semiconductor device |
| abstract | PURPOSE: To inhibit a substrate effect without forming pocket regions under a channel region, and to prevent the increase of the resistance values of the noses of source-drain regions by the pocket regions by forming the pocket regions and the source-drain regions by the same masks, using sidewall films shaped onto the side faces of a gate electrode as masks. n CONSTITUTION: One conductivity type deep ion implanting layer 13 and a reverse conductivity type shallow channel layer 14 are formed onto the surface of an element forming region in one conductivity type semiconductor substrate 11, and a gate electrode 17 is shaped onto the surface of the substrate 11 through a gate insulating film 16. Sidewall layers 18 are formed onto the side faces of the gate electrode 17, and one conductivity type pocket regions 20 are shaped by employing the sidewall layers 18 as masks. Reverse conductivity type source- drain regions 22, 23 are formed through double diffusion by using said sidewall layers 18 as masks. N - type source-drain regions 22a, 23a are shaped by implanting the ions of phosphorus first, and N + type source-drain regions 22b, 23b are formed by implanting the ions of arsenic, and the regions 22a, 23a, 22b, 23b are annealed. n COPYRIGHT: (C)1988,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6238978-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H02305443-A |
| priorityDate | 1987-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.