http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63297204-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0043 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B19-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B19-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B19-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 |
| filingDate | 1987-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b730558649e67a11b31d5e3693eab85 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ad143a7f48630cda52f38b3da7c0f4a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d2a4e5c8e42c680c8ddfc4ef70fca9d7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_54beae71fecb040b3d1c18ab980e2941 |
| publicationDate | 1988-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S63297204-A |
| titleOfInvention | Fine processing |
| abstract | PURPOSE:To finely process a thin film and to obtain a thin film having a desired pattern, by immersing a thin film consisting of any of Se, Se and As, S and As and Se, S and As in a corrosive solution having a developing solution for photoresist film of organic alkali-containing positive type. CONSTITUTION:For example, a thin film consisting of Se, a thin film consisting of Se and As, a thin film consisting of S and As or a thin film consisting of Se, S and As is formed on a glass substrate by resistance heating deposition method, etc., a positive type photoresist is applied to the thin film, cured and exposed to light rays into a desired pattern. Then the substrate is immersed in a developing solution for a photoresist film of organic alkali-containing positive type containing methylammonia shown by the formula or optionally a mixed solution of the developing solution and pure water and part except the resist film is dissolved to give a thin film of desired pattern. |
| priorityDate | 1987-05-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.