http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63293540-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
| filingDate | 1987-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4abbb1c7edd8c85d7ff97dc97d955079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e359a3dca53665e65b6ed40d52ff787a |
| publicationDate | 1988-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S63293540-A |
| titleOfInvention | Positive type resist material |
| abstract | PURPOSE:To improve the sensitivity of a resist film to high energy rays and the resistance thereof to dry etching by using a specific polysilane copolymer. CONSTITUTION:The titled material consists of the polysilane copolymer having the repeating units expressed by formulas I and II. In formulas, R1 denotes Cl-substd. alkyl; R2 denotes a satd. hydrocarbon of >=4C; R3-R5 denotes an arom. or satd. hydrocarbon. An org. solvent such as toluene is usable for the solvent of this copolymer. An independent liquid of ethanol, etc., or liquid mixture composed thereof is usable for the developing soln. The resist film having high sensitivity to high energy rays such as UV rays and the excellent drying etching resistance is obtd. by using this copolymer. |
| priorityDate | 1987-05-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.