http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63274175-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7375 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-331 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-73 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 1987-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5cd45bfd8f7e05ee8e4f71dc8251ce8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_622b51554ea8bf129f9eec3d77ed583f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b9f6edeb49d9bcbbbe4ca9f0e92b002 |
| publicationDate | 1988-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S63274175-A |
| titleOfInvention | Heterojunction element and manufacture thereof |
| abstract | PURPOSE:To obtain a practical silicon system wide gap material by using amor phous material silicon arsenic consisting of a couple elements of silicon and arsenic as the hetero material for silicon and emitter material for Si-HBT. CONSTITUTION:An amorphous silicon arsenic (a-SiAsx) is mainly fabricated by a reduced-pressure CVD method. As the raw material gas, disilane Si2H6 and arsine AsH3 are used and as the carrier gas, helium He is used. These are guided to a quartz reaction tube for thermal decomposition at 450-500 deg.C and thereby a thin film of a-SiAsx is deposited on a silicon wafer. The a-SiAsx thus formed is of perfect amorphous state. Prior to application of a-SiAsx to the emitter of Si-HBT, a hetero junction diode of a-SiAsx and p type silicon is constituted. A polycrystalline silicon layer 6 is provided to protect a thin a-SiAsx layer 5. For deposition of polycrystalline silicon, temperature is raised to 600 deg.C after formation of a-SiAsx to lower the flow rate of arsine and thereby the polycrystal silicon is directly deposited. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006511084-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5374481-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0543759-A2 |
| priorityDate | 1987-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.