http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63265851-A

Outgoing Links

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C7-025
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-00
filingDate 1987-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3717760de0c846fda6972df2e68cd400
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publicationDate 1988-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S63265851-A
titleOfInvention Semiconductor ceramics material
abstract PURPOSE:To provide the titled material which is useful as a material for heaters, temp. sensors, electrode, etc., has low specific resistance in a low temp. range and high strength and is dense by adding an Al compd. to a compsn. essentially consisting of BaPbO3 of which the Ba/Pa molar ratio is within a prescribed range, then molding and calcining this compsn. CONSTITUTION:For example, an aq. soln. of a Ba compd. such as Ba(NO3)2 and an aq. soln. of a Pb compd. such as Pb(NO3)2 are mixed at the ratio of the Ba/Pb molar ratio = 40/60-60/40 and thereafter, an aq. soln. of (NH4)2CO3 soln. is added to the mixture and the mixture is dried, calcined and ground to obtain the BaPbO3 series compsn. (A) essentially consisting of BaPbO3 having the above-mentioned Ba/Pb molar ratio. Al2O3 or a compd. which forms Al2O3 when calcined is then added to the component A at 0.1-6.0wt.% (in terms of Al) and the mixture is molded and calcined at 900-1,100 deg.C.
priorityDate 1987-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 22.