http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63231336-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 1987-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5b448c18e62c6a04d69ecb67fc2a931 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_249134be689cbc0d3642d044031f18d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb2c0b6a8b818916cb055419ec3967d5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ef0c9bb11344bfbd34bb308fec4894f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_719f6f8f5ba08eaa546aa2b4c7a1d2a7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7eb9187837867c9c08b7a2db9ce85446 |
| publicationDate | 1988-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S63231336-A |
| titleOfInvention | Negative type resist for double-layered structure |
| abstract | PURPOSE:To make it possible to form a fine pattern even on a substrate having large difference in level by using a compsn. consisting of a silicon modified alkali-soluble resin and an azido or bisazido compd. to form a resist layer. CONSTITUTION:An org. resin layer 2 is formed on a substrate 1 by coating. A photoresist layer 3 consisting of a silicon modified alkali-soluble resin and an azido or bisazido compd. is formed on the layer 2 by coating, patternwise exposed to UV and developed with an alkaline developing soln. The org. resin layer 2 is then etched with oxygen plasma. The resist compsn. has high resolution and superior resistance to oxygen plasma. By using the negative type resist for a double-layered structure, a fine pattern can be formed even when the substrate 1 has large difference in level. The resist is used to produce an electronic circuit device having a fine pattern such as a semiconductor device, a magnetic bubble memory device or a surface wave filter. |
| priorityDate | 1987-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.