http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63231330-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 |
| filingDate | 1987-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7eb9187837867c9c08b7a2db9ce85446 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb2c0b6a8b818916cb055419ec3967d5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5b448c18e62c6a04d69ecb67fc2a931 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_719f6f8f5ba08eaa546aa2b4c7a1d2a7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ef0c9bb11344bfbd34bb308fec4894f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_249134be689cbc0d3642d044031f18d4 |
| publicationDate | 1988-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S63231330-A |
| titleOfInvention | Positive type resist having two-layer structure |
| abstract | PURPOSE:To permit formation of fine patterns even on a substrate having a high step by using a compsn. consisting of a silicone modified alkali soluble resin, partial ladder type silicon resin and quinone diazide compd. for a resist layer. CONSTITUTION:An org. resin layer 2 is coated and formed on the substrate 1 and the photoresist layer 3 consisting of the silicone modified alkali soluble resin, the partial ladder type silicone resin and the quinone diazide compd. is coated and formed thereon; thereafter the layer is subjected to pattern exposing by UV rays and is developed by an alkaline developing soln. The org. resin layer 3 is then etched by oxygen plasma. The resist layer 2 having such two-layer structure is enhanced in oxygen plasma resistance by addition of the silicon resin having the partial ladder structure, by which the side etching at the time oxygen plasma etching is decreased and a high definition is obt. The fine patterns are obtainable even if the high step exists by adoption of such positive type resist for the two-layer structure. The patterns are used for electronic circuit elements having the fine patterns such as semiconductor elements, magnetic bubble memory elements and surface wave filter elements. |
| priorityDate | 1987-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.