http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63229729-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_188587704b3fe9f0e1653ba5d9ab0edd |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 1987-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f78ee71941598061139481b514dc7a9e |
| publicationDate | 1988-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S63229729-A |
| titleOfInvention | Method of testing semiconductor device |
| abstract | PURPOSE: To realize a state approximated to the fluctuations of the electrical characteristics of a semiconductor device, which are caused by a resin sealing, in the state of, a semiconductor wafer previous to the resin sealing and to make possible an electrical test for the device by a method wherein the electrical characteristics are measured in a state that the surface of the water is covered with a high-dielectric constant material layer having a dielectric constant equal with that subsequent to the resin sealing and the high-dielectric constant material layer is removed after the measurement. n CONSTITUTION: A semiconductor device is constituted comprising a chip forming region 1 formed on a semiconductor wafer, metal wiring layers 2 and 3, a cover layer 6 and a photo resist 7, which is formed on the upper surface of this cover layer 6 and is used as a high- dielectric constant material layer having a dielectric constant equal with that subsequent to a resin sealing. Probes 8 each come into contact to opening parts 4 and 5 of signal terminals and a signal is supplied to an element in the region 1 through the wiring layers 2 and 3 from the outside to measure the electrical characteristics of the device. Accordingly, the amount of an increase in a capacity which is generated between the layers 2 and 3 becomes equal with that subsequent to the resin sealing by the photo resist 7 and the delay of a signal propagation velocity and the lowering of a signal amplification degree can be realized. Thereby, an electrical test can be conducted on conditions approximated to the electrical characteristics subsequent to the resin sealing. n COPYRIGHT: (C)1988,JPO&Japio |
| priorityDate | 1987-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419512635 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID962 |
Total number of triples: 13.