http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63220241-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_03d0f52bb4069f8a19d70dcfb697c67a
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03C1-72
filingDate 1987-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4eb526dd1ede469835cc80c2e01abf2
publicationDate 1988-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S63220241-A
titleOfInvention Photoresist composition
abstract PURPOSE:To improve the anti-oxygen plasma etching property of the titled composition by incorporating a specific siloxane polymer and a sensitive substance contg. >=3 numbers of 1,2-naphthoquinone diazido-4-sulfonyl ester group or 1,2-naphthoquinone diazido-5-sulfonyl ester group in one molecule, in the titled composition. CONSTITUTION:The titled composition contains the siloxane polymer shown by formula I or II and >=3 numbers of 1,2-naphthoquinone diazido-4-sulfonyl ester group or 1,2-naphthoquinone diazido-5-sulfonyl ester group in one molecule. In formulas I and II, Y is OH group, etc., R-R'' groups are the same or the different with each other,and are each one kind of the group selected from hydrogen atom, alkyl and phenyl groups, (l)-(n) are each or a positive integer. Thus, the durability of the titled composition against dry-etching using an oxygen plasma is improved.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H03100553-A
priorityDate 1987-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 21.