http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63158539-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-038 |
| filingDate | 1986-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_57ac23dff79ea84ec0f5149104275f52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08b682b25c4ac0809c6918004eee3ece http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9f8cdcb3666e03b4813f8a1a61316f9 |
| publicationDate | 1988-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S63158539-A |
| titleOfInvention | Radiation sensitive negative type resist and formation of pattern |
| abstract | PURPOSE:To improve the durability of the titled resist for an oxygen plasma and solubility of the titled resist and to form a fine two layer resist pattern by consisting of the single polymer of a specific organosilicone compd., and consisting essentially of the polymer or the copolymer of a mixture of said compd. and an another chlorinated organosilicone compd. CONSTITUTION:The titled resist is consisting of the single polymer of the organosiloxane compd. shown by formula I or consisting essentially of the copolymer of the mixture of said compd. and the another chlorinated organosilicone compd. polymerized with the action of an alkali metal catalyst. In the formula, R1-R3 may be the same or the different with each other. At least one of the R1-R3 groups is chlorine atom, the another is each phenyl, alkyl or vinyl group or chlorine atom, R4 is alkyl or vinyl group. Thus, the solubility of the titled resist is improved, and the titled resist is applicable to the UV ray sensitive resist which has good mask effect for dry etching caused by an oxygen plasma, and the two layer resist pattern with the fine and high accuracy can be simply formed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0318855-A |
| priorityDate | 1986-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.