| abstract |
PURPOSE:To increase machining speed and suppress generation of scratches by dissolving a compound for generating active halogen such as chlorinated isocyanuric acid into an organic solvent in a range of halogen concentration from 0.01-10 weight/volume %. CONSTITUTION:In order to produce a polishing agent for III-V compound semiconductor such as GaAs, a compound for generating active halogen such as chlorinated isocyanuric aid, N-halogenated dimethyl hydantoin, N-halogenated succinic imido, or N-halogenated phthalimide, is dissolved into an ester, Ketone, or alcohol solvent in a range of halogen concentration from 0.01-10 weight/ volume %. Machining speed is increased with little generation of scratches so that an excellent mirror-like surface can be obtained by means of such a polishing agent. |