abstract |
PURPOSE: To minimize the degradation of the electrical characteristics of a bonding part and damages on a semiconductor element at the time of wire bonding by a method wherein an electrode pad is composed of three specific metal layers. n CONSTITUTION: The electrode pad 21 of a semiconductor device in which wire bonding is performed with a wire 16 made of copper system material is composed of three layers of 1st metal layer 18 which can have ohmic contact with the semiconductor and has no influence upon a semiconductor element 13, 2nd metal layer 19 which is formed on the 1st metal layer 18 and is harder than the 1st metal layer 18 and 3rd metal layer 20 which is formed on the 2nd metal layer 19 and to which the wire 16 made of copper system material can be bonded. The 2nd hard metal layer 19 serves as a barrier against damage at the time of wire bonding. With this constitution, degradation of the electrical characteristics of the bonding part and damages on the semiconductor element 13 can be minimized. n COPYRIGHT: (C)1988,JPO&Japio |