http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63141363-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 1986-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fbd58118871127ddd15fda90425bb7ad |
| publicationDate | 1988-06-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S63141363-A |
| titleOfInvention | Semiconductor integrated circuit |
| abstract | PURPOSE:To obtain a high output voltage by a method wherein elements constituting a direct current voltage conversion circuit are formed near the surface of a diffused well region with the impurity therein reduced in concentration. CONSTITUTION:After the formation of a P-type diffused well 12 on an N-type silicon substrate 11, an N-type impurity is diffused into the well 12 in a compensating process, which results in a P-well region 13 with its surface impurity concentration lowered. In the P-well region 13, an N-channel MOS transistor is constructed that is an constituent of a step-up circuit. The P-well region 13 with its surface impurity concentration reduced is formed by the compensating diffusion of a N-type impurity. The N-channel MOS transistor, constructed in this way at a portion in a P-type diffusion well whereat the surface impurity concentration is low, has a low threshold voltage VT. Such a MOS transistor presents but a small forward direction voltage drop VF when a connection is established between the gate and drain for use as a diode, when the step-up circuit output voltage drop will be also small. |
| priorityDate | 1986-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 |
Total number of triples: 17.