http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63129095-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c186e9ae8cafab5df5c8d80cfa7b0fa1 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-48 |
| filingDate | 1986-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_63139595ca090f734bfd4bd3fb18b780 |
| publicationDate | 1988-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S63129095-A |
| titleOfInvention | Vapor phase epitaxy |
| abstract | PURPOSE: To grow a high-resistance compound semiconductor epitaxial layer with good reproducibility without clogging in piping by doping chromium to a compd. semiconductor such as GaAs by using a chromium compd. film. n CONSTITUTION: A substrate 5 consisting of III-V or II-VI compd. semiconductor of the periodic table (e.g.: GaAs), for example, Ga-contg. source port 3, and a mixer 4 are installed in a high-purity quartz reaction tube constituted to permit heating by a heater 1. The substrate 5 is then heated to 700W750°C and the Ga source 3 to 830W880°C by the heater 1. AsCl 3 is bubbled by passing gaseous H 2 from a piping 8 and AsCl 3 and gaseous H 2 from a piping 7 and at the same time, a chromium oxide film is formed on the mixer 4 surface by introducing the gaseous H 2 bubbled with the chromium compd. such as CrO 2 Cl 2 from a doping piping 6. The piping 6 is then exchanged with a brand new pipe and epitaxy is effected by using the above-mentioned mixer 4, by which the high-resistance GaAs compd. semiconductor epitaxial layer doped with the chromium is grown on the substrate 5. n COPYRIGHT: (C)1988,JPO&Japio |
| priorityDate | 1986-11-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.