http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63118739-A

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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
filingDate 1986-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5b448c18e62c6a04d69ecb67fc2a931
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publicationDate 1988-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S63118739-A
titleOfInvention Process for forming resist pattern
abstract PURPOSE:To form a resist pattern having superior definition by providing an intermediate layer comprising a mixture consisting of a specified silicone resin and a monoazide or bisazide compd. to a three layered resist. CONSTITUTION:A mixture consisting of a silicone resin expressed by the formula I with the monoazide or bisazide compd. is used for the intermediate layer of the three layered resist. In the formula I, R is a vinyl or allyl group; n is a positive integer, which is pref. 10-1,000, more pref. 50-500. Suitable material for the lowest layer of the three-layered resist is phenol-novolak resin, etc. On one hand, conventional resist may be used for the upper layer of the resist. By this method, a resist pattern having high resolution power can be formed.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H02251961-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6743885-B2
priorityDate 1986-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 23.