http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63108278-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 1986-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8af093b4dfe380956f1b1db46f857fbd |
| publicationDate | 1988-05-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S63108278-A |
| titleOfInvention | Low temperature storage testing method for semiconductor device |
| abstract | PURPOSE: To prevent the surface metallic part of a semiconductor element from corroding after a low temperature storage test by filling a tray with gas which has a dew point below low-temperature storage test temperature after storing a semiconductor, sealing the tray, and putting the device in the low-temperature tank and taking the test. n CONSTITUTION: The semiconductor device 4 is put in the tray together with gas such as nitrogen and argon which has a dew point below the low- temperature storage temperature, and this tray 3 is installed in the low temperature tank 1 and held at low temperature to take the test. The tray 3 is taken out after the test and held at room temperature, and then the semiconductor device 4 is taken out of the tray 3. Consequently, no water is condensed on the semiconductor device and the case of the semiconductor device is prevented from corroding. n COPYRIGHT: (C)1988,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2003065943-A |
| priorityDate | 1986-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.