| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5d7576285d411d00c697e07270d2814a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0202
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0201
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-05
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-095 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0264
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3043
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-02 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 |
| filingDate |
1985-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_037e44d78a4118dc733c6338cfaf5739
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a020bc86d2804e4b8e8a5c763772a44c |
| publicationDate |
1987-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-S6286786-A |
| titleOfInvention |
Semiconductor laser and manufacture of the same |
| abstract |
PURPOSE: To form a laser resonator plane composed of the cleaved plane of an epitaxial layer group which contribute to laser operation in the state of a wafer by providing an epitaxial separating layer between a substrate and the epitaxial layer group contributing to the laser operation. n CONSTITUTION: A substrate 7, an epitaxial separating layer 6 formed on the substrate 7, a group of epitaxial layers 2∼5 which contribute to laser operation and a laser resonator plane 16 which is composed of a cleaved plane of the group of the epitaxial layers 2∼5 are provided. For instance, a thick epitaxial separating layer 6 made of AlAs is formed on the substrate 7 and the epitaxial layer group contributing laser operation and photoelectric converting operation is formed on the layer 6. Then only the epitaxial separating layer 6 is selectively removed by scoop-out etching with etchant such as fluoric acid to form a cantilever structure composed of the epitaxial layer group. Then, by applying pressure to the cantilever structure from the top surface of the wafer, the epitaxial layer group is cleaved to form cleaved planes and the laser resonator plane 16 of the laser diode part 10 and the photoreceiving plane 17 of a monitor photodiode part 11 can be obtained. n COPYRIGHT: (C)1987,JPO&Japio |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0637404-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4914053-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-D865514-S |
| priorityDate |
1985-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |