http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6276645-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0950e9df7f0e1b73efee1bda859951ad |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76286 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-012 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76275 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S148-135 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76278 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2007 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76294 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76264 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 1985-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4861f6abfd17505173252b0e0850da69 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5d3838f3bdcbc57d2619a1f9712c5d9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88d538825a1f2c931cd060cbc42b1cc1 |
| publicationDate | 1987-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S6276645-A |
| titleOfInvention | Structure of composite semiconductor crystal |
| abstract | PURPOSE:To decrease restrictions on a circuit constitution and to form functional element having different withstanding voltage characteristics as a unitary body, by providing an etched part, which is provided by selectively etching a first semiconductor substrate and an insulating film of a composite substrate and reaches a second semiconductor substrate, and providing an epitaxial layer, which is formed at the etched part in the second semiconductor substrate in a vapor phase. CONSTITUTION:A surface to be bonded of a first semiconductor substrate 11 of an N-type silicon and a surface to be bonded of a second semiconductor substrate 12 of N<+> type silicon are polished to obtain mirror surfaces. After washing with clean water, thermal oxide films (insulating films) 13a and 13b are formed in a clean atmosphere. Then, the mirror surfaces of the first semiconductor substrate and the second semiconductor substrate 12 are closely contacted and heat treatment is performed. Thus a composite substrate 10, in which the mirror surfaces are rigidly bonded, is obtained through an oxide film 13. eTching is performed to the oxide film 13 between the first semiconductor substrate 11 and the second semiconductor substrate 12. The oxide film 13 is removed, and etching is performed to the inside of the second semiconductor substrate 12. Thus an etched part 14 is formed. An N<-> type silicon is grown in a vapor phase on the etched surface. The etched part 14 is buried, An epitaxial layer 15, which is monolithic with the second semiconductor substrate, is formed. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-4985745-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008087636-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5072277-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H01302740-A |
| priorityDate | 1985-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID962 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419512635 |
Total number of triples: 32.