| abstract |
PURPOSE:To obtain the titled resist having improved durability against an oxygen plasma and sensitivity of the photoresist by incorporating poly(allylsilsesquioxane) having a specific mol.wt. and bisazide to the titled resist. CONSTITUTION:The photoresist contains the poly(allylsilsesquioxane) which has 3,000-5,000 weight average mol.wt. and is shown by the formula, and the bisazide. The bisazide is exemplified by a compd. capable of photodecomposing with far UV rays of 200-300nm, and is preferably for example, 2,6-bis(4- azidobenzylidene)-4-methyl cyclohexane. The resist pattern having a high resolu tion is obtd. by forming a high density cross-linking structure by reacting, with a high sensitivity, many of allyl groups contg. in the polymer shown by the formula with nitrene which is formed by photodecomposing the azide. The titled photoresist which has the excellent durability against the oxygen plasma and is suitable for the upper layer of the two layer resist process is obtd. |