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filingDate 1986-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2809bb80086ef398da6a77d93ecd4a56
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publicationDate 1987-10-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-S62230828-A
titleOfInvention Insulating film for semiconductor, formation thereof and coating solution
abstract PURPOSE:An insulating film, obtained by coating a base material with a mixture solution of a siloxane based prepolymer prepared by polycondensing respective tetrafunctional, trifunctional and bifunctional siloxanes in an organic solvent and heat-treating the resultant coat in the presence of oxygen at a specific temperature or above and useful for semiconductors. CONSTITUTION:An insulating film obtained by coating a base material with a mixture solution consisting of a siloxane based prepolymer prepared by simultaneously polycondensing (A) a tetraalkoxysilane expressed by formula I (R<1> is 1-6C alkyl or 6-10C aryl), (B) an alkyltrialkoxysilane or aryltrialkoxysilane expressed by formula II (R<2> and R<3> are same as R<1>) and (C) a dialkyldialkoxysilane or diaryldialkoxysilane expressed by formula III (R<4>-R<6> are same as R<1>) at 0.14-0.5:0.03-0.66:0.11-0.66mol ratio (A):(B):(C) or preferably previously polycondensing the component (B) and polymerizing the components (A) and (C) and an organic solvent and heat-treating the resultant coat in the presence of oxygen at >=400 deg.C.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011181898-A
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priorityDate 1985-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 43.