http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S62229823-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_60e21de07fa18fc54e2150daffc14654 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 1986-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5cf55e3263f2e6d962e1fc5a3831ac4f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_166d1e11006e710b945dfb642ed7ad40 |
| publicationDate | 1987-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S62229823-A |
| titleOfInvention | Method of growing added compound semiconductor crystal |
| abstract | PURPOSE: To enable a thin film with impurity in high concentration added thereto to be grown by a method wherein at least a part of material in vapor state containing impurity element is excited by microwave electron cyclotron resonance to plasma state to be carried to a substrate crystal through a divergent magnetic field. n CONSTITUTION: Nixed gas of silane and arsine is led in from a gas leading-in port 7: trimethyl gallium is led from another gas leading-in port 6; microwaves are impressed through square waveguide 2; and microwave electron cyclotron resonance plasma is produced in a cavity resonance type plasma producing cheaper 5. Within the device, the magnetic field intensity is diminished from the cavity resonance type plasma producing chamber 5 to a growing chamber (divergent magnetic field) resultantly taking out the divergent plasma to be carried to a substrate crystal 8. Through these procedures, a thin film with impurity in high concentration added thereto is grown on the substrate. n COPYRIGHT: (C)1987,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63239923-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S63303889-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H05234892-A |
| priorityDate | 1986-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.