http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S62227929-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G77-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 |
| filingDate | 1986-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_719f6f8f5ba08eaa546aa2b4c7a1d2a7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ef0c9bb11344bfbd34bb308fec4894f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb2c0b6a8b818916cb055419ec3967d5 |
| publicationDate | 1987-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S62227929-A |
| titleOfInvention | Resist material |
| abstract | PURPOSE:To obtain an organopolysiloxane highly sensitive to X-rays and useful as a resist material, by using a specified polymer containing a siloxane bond as a component. CONSTITUTION:An organopolysiloxane of formula I (wherein R1 is a group of formula II, formula III or -C6H5, R2 is a group of formula IV (wherein K+L=2m+1, m>=2 and m is 1-5 and n is a degree of polymerization). The organopolysiloxane of formula I can be obtained by synthesizing vinylsilsesquioxane, an arylsilsesquioxane or a methyl-vinyl- or methyl-aryl- containing silsequioxane and halogenating the unsaturated bonds with a halogenating agent such as chlorine gas to introduce halogen atoms into a ladder silicone resin. The organopolysiloxane of formula I is useful as an ionizing radiation-sensitive resist material, especially, X-ray-sensitive resist material. This resist material can be advantageously used as a stop layer of a two-layer structure resist film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H01221384-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H0873593-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H01123229-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-H02163744-A |
| priorityDate | 1986-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556973 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24526 |
Total number of triples: 23.