http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S62190833-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-263 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 1986-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa48690754e8a1f289c1c8fb0acbc0cb http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1cc459d639f04488663a9d9e9a8d29cd |
| publicationDate | 1987-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S62190833-A |
| titleOfInvention | Light irradiation vapor growth apparatus |
| abstract | PURPOSE: To easily eliminate reaction products adhered to the light transmitting window in every growth and improve reproducibility of film thickness and working efficiency of apparatus by separating a reaction chamber and a light introducing chamber provided with a light transmitting window and providing a vacuum exhausting means and gas plasma generating means to the light introducing chamber. n CONSTITUTION: A light transmitting window 6 is provided in a light introducing chamber 9 separated from a reaction chamber 1 through a control valve 8 and the light introducing chamber 9 can be vacuumed from a vacuum exhausting port 11. First, a film is formed while the control valve 8 is opened. For example, in the case of forming a film of GaAs, polycrystalline of GaAs and arsenic As are adhered to the light transmitting window 6 at the time of growth. After the growth of said film, the control valve 8 is closed and carbon tetrachloride gas is supplied to the light introducing chamber 9, a high frequency voltage is applied to the plasma generating electrodes 10 in order to generate gas plasma and GaAs polycrytalline adhered to the light transmitting window 6 is eliminated by gas plasma etching. After it is removed, the light introducing chamber 9 is sufficiently vacuumed from the vacuum exhausting port 11. Here, the next growth starts. n COPYRIGHT: (C)1987,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-6506253-B2 |
| priorityDate | 1986-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.