http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S62176135-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-0017 |
| classificationIPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G18-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G73-10 |
| filingDate | 1986-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cfacd89a93a340538f6675fee34fdd14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cc5e345d2c6cb9b98f0f2b7b7569ab03 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9e88332edd52b65eaa00e5bf3597594 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3c734871f38b670d0769e951e2ed9ef5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79374510bdb3abc56797754f8e7a6566 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd4da084e74a4fd65c2d2c185cf27180 |
| publicationDate | 1987-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S62176135-A |
| titleOfInvention | Etching method for resin film |
| abstract | PURPOSE: To form an opening pattern having a specified shape for a minute through hole highly accurately, by providing a mask on an organic macromolecular resin film, which has insulating property and a thermal expan sion coefficient of 3×10 -5 /k or less, and performing wet etching. n CONSTITUTION: As an insulating material between wirings for an integrated circuit mounting wiring substrate, it is desirable to use an organic macromolecular resin, which has a thermal expansion coefficient of 3×10 -5 /k and a low dielectric constant and is suitable for high-speed propagation of an electric signal. It is suitable to use a polyimide resin, which is especially excellent in heat resistance. In order to utilize the effect of the present invention sufficiently, it is most desirable to use new polyimide, whose thermal expansion coefficient is small in comparison with a conventional polyimide resin (thermal expansion coefficient is 4×10 -5 k or more). As a basic chemical structure of such a low thermal-expansion-coefficient polyimide, a material comprising a formula (I) is listed. In etching the low thermal-expansion-coefficient resin film, the film is immersed in hydrazine etching liquid at a half curing treatment stage at a heating temperature of 205°C, at which imide is not completely formed. n COPYRIGHT: (C)1987,JPO&Japio |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105017529-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5286841-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5175367-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5322917-A |
| priorityDate | 1986-01-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.