| abstract |
PURPOSE:To improve bondability between a silver layer and a solder layer by forming an Ni layer containing P or B as a foundation layer for an Ni-Sn alloy or Co-Sn alloy layer and shaping a copper or copper alloy layer between these layers and the silver layer. CONSTITUTION:A P-Ni alloy layer 11 is formed onto the whole surface of a metallic base body 1 consisting of a copper alloy as a foundation layer, and an Ni- Sn alloy layer 2 is shaped. Copper layers 12 are each formed to a semiconductor element fixing section and an internal lead terminal section wired to a semiconductor element 4 as an Si pallet by an Au wire 5 as intermediate layers, and a silver layer 3 is shaped onto the surface. The Ni alloy layer containing P or B does not form a brittle intermetallic compound between itself and copper or a copper alloy as a metallic substrate at that time even on deterioration for a prolonged term at a low temperature, and severally bonds with copper or the copper alloy and the Ni-Sn alloy or a Co-Sn alloy layer tightly. Wetting properties to molten solder or tin are improved extremely. Accordingly, an IC package having excellent reliability can be manufactured. |