http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6146036-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5547f741b25666fc4ae5195cf71a979b |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01013 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-1134 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00013 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-11 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-11 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
| filingDate | 1984-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_421895bd0cc692041fbd47a009de63d1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_589916bb083b1b20ef1019861cced28b |
| publicationDate | 1986-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S6146036-A |
| titleOfInvention | Manufacture of semiconductor device |
| abstract | PURPOSE:To enable a bump to be formed in a simplifed step and at a high yield as well as at a reduced cost, by forming a metal ball at the distal end of a thin metal wire by means of electric discharge or hydrogen flame, bonding the ball to an electrode terminal part on a semiconductor element, and cutting off the metal ball from the metal wire. CONSTITUTION:A thin metal wire 8 is passed through the bore inside a capillary 10 and suspended above a semiconductor element 1, and electric discharge is caused between the distal end of the thin wire 9 and a discharging rod 13 to form a ball 11 at the end of the wire 9. Then, the rod 13 is withdrawn, and the capillary 10 is lowered to thermoweld the metal ball 11 to an electrode terminal part on the semiconductor element 1. Thereafter, the capillary 10 is pulled upwardly, thereby cutting off the wire 9 at the joint of the ball 11 and thus leaving a bump 8. In this way, it is possible to obtain a semiconductor device 1 having a bump 8 formed by the metal ball thermoweld to an aluminum electrode terminal part 4 exposed through an opening provided in a protection insulator film 5 on the semiconductor element 1. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5124277-A |
| priorityDate | 1984-08-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.