http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-S6136976-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0a6a69da5879eb83f56f6876dba3e3cf |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-792 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate | 1984-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c73335b7133ae18b74c45e6ebb1dd66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5c27be02d1133fdded0001692c8e504 |
| publicationDate | 1986-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-S6136976-A |
| titleOfInvention | Manufacture of semiconductor memory device |
| abstract | PURPOSE:To obtain the MONOSFET comprising good memory maintaining properties by implanting hydrogen ions after forming the second silicon oxide film on a silicon nitride film and further subjecting the substrate to a heat treatment at the same temperature as in the case of forming the silicon nitrde film. CONSTITUTION:A source region 2 and a drain region 3 are formed on an N type silicon substrate 1 and a silicon oxide film 5 is formed in an opening part of a silicon oxide film 4. Next, after a silicon nitride film 6 is gas-phase grown on said silicon film 5, the surface of silicon film 6 is oxidized by a heat treatment to produce a silicon oxide film 7. Subsequently, hydrogen ions 8 are implanted into the whole substrate, after which the heat treatment at the same temperature as in the case of forming the silicon nitride film 6 is effected. Lastly, an aluminum electrode 9 and a silicon oxide film 10 are formed and thus the P-channel MONOS nonvolatile memory device is fabricated. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4545401-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007173398-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006319082-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005045012-A |
| priorityDate | 1984-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.